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| TSC136 High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 3A 2V @ IC / IB = 2A / 0.5A Features High Voltage High Speed Switching Block Diagram Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TSC136CZ C0 Package TO-220 Packing 50pcs / Tube Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Total Dissipation @ Tc 25 C Collector Peak Current (tp <5ms) Collector Current Base Peak Current (tp <5ms) Base Current Maximum Operating Junction Temperature Storage Temperature Range o Symbol VCBO VCEO VEBO Ptot ICM IC IBM IB TJ TSTG Limit 700 400 9 60 6 3 3 1.5 +150 -65 to +150 Unit V V V W A A A A o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Symbol RJC Limit 2.08 Unit o C/W 1/5 Version: C07 TSC136 High Voltage NPN Transistor Electrical Specifications Parameter Static Collector-Base Voltage a Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage a Conditions IC = 10mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 IC =0.5A, IB =0.1A IC =0.6A, IB =60mA IC =2A, IB =0.5A VCE = 5V, IC = 10mA VCE = 5V, IC = 1A VCE = 5V, IC = 2A VCE = 10V, IC = 0.1A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 1A, IB1 = 0.2A, IB2 = 0.2A, RL = 125ohm Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 hFE 1 hFE 2 hFE 3 fT Cob tON tSTG tf Min 700 400 9 -----10 10 4 4 ----- Typ -------1.5 27 ---21 0.4 2.0 0.16 Max ---100 10 0.5 0.7 2 -30 24 ------ Unit V V V uA uA V DC Current Gain Frequency Output Capacitance Turn On Time Storage Time Fall Time MHz pF uS uS uS Notes: a. Pulsed duration = 300uS, duty cycle 1.5% 2/5 Version: C07 TSC136 High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. Vce(sat) v.s. Vbe(sat) Figure 4. Power Derating Figure 5. Reverse Bias SOA Figure 6. Safety Operating Area 3/5 Version: C07 TSC136 High Voltage NPN Transistor TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.75 0.85 0.029 0.033 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 1.285 1.315 0.050 0.051 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Marking Diagram Y M = Year Code = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Lot Code L 4/5 Version: C07 TSC136 High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: C07 |
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